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Manufacturer:
Capacitance @ Vr, F:
Current - Average Rectified (Io):
Current - Reverse Leakage @ Vr:
Operating Temperature - Junction:
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Reverse Recovery Time (trr):
Supplier Device Package:
Voltage - DC Reverse (Vr) (Max):
Voltage - Forward (Vf) (Max) @ If:
53,476 Records
Image Part Manufacturer Description Stock Action
1N5398G B0G Taiwan Semiconductor
DIODE GEN PURP 800...
750
In-stock
Inquiry
1N5398GHB0G Taiwan Semiconductor
DIODE GEN PURP 800...
4,842
In-stock
Inquiry
1N5399G B0G Taiwan Semiconductor
DIODE GEN PURP 1.5...
3,460
In-stock
Inquiry
1N5399GHB0G Taiwan Semiconductor
DIODE GEN PURP 1.5...
2,273
In-stock
Inquiry
1N5400G B0G Taiwan Semiconductor
DIODE GEN PURP 50V...
4,985
In-stock
Inquiry
1N5400GHB0G Taiwan Semiconductor
DIODE GEN PURP 50V...
4,107
In-stock
Inquiry
1N5401G B0G Taiwan Semiconductor
DIODE GEN PURP 100...
581
In-stock
Inquiry
1N5401GHB0G Taiwan Semiconductor
DIODE GEN PURP 100...
3,582
In-stock
Inquiry
1N5402G B0G Taiwan Semiconductor
DIODE GEN PURP 200...
2,167
In-stock
Inquiry
1N5402GHB0G Taiwan Semiconductor
DIODE GEN PURP 200...
4,089
In-stock
Inquiry
1N5404G B0G Taiwan Semiconductor
DIODE GEN PURP 400...
4,443
In-stock
Inquiry
1N5404GHB0G Taiwan Semiconductor
DIODE GEN PURP 400...
4,950
In-stock
Inquiry
1N5406G B0G Taiwan Semiconductor
DIODE GEN PURP 600...
1,922
In-stock
Inquiry
1N5406GHB0G Taiwan Semiconductor
DIODE GEN PURP 600...
3,260
In-stock
Inquiry
1N5407G B0G Taiwan Semiconductor
DIODE GEN PURP 800...
1,033
In-stock
Inquiry
1N5407GHB0G Taiwan Semiconductor
DIODE GEN PURP 800...
3,885
In-stock
Inquiry
1N5408G B0G Taiwan Semiconductor
DIODE GEN PURP 3A...
2,327
In-stock
Inquiry
1N5408GHB0G Taiwan Semiconductor
DIODE GEN PURP 3A...
3,981
In-stock
Inquiry
1N5817 B0G Taiwan Semiconductor
DIODE SCHOTTKY 20...
3,422
In-stock
Inquiry
1N5817HB0G Taiwan Semiconductor
DIODE SCHOTTKY 20...
4,666
In-stock
Inquiry