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Manufacturer:
Capacitance @ Vr, F:
Current - Average Rectified (Io):
Current - Reverse Leakage @ Vr:
Operating Temperature - Junction:
Package / Case:
Reverse Recovery Time (trr):
Supplier Device Package:
Voltage - DC Reverse (Vr) (Max):
Voltage - Forward (Vf) (Max) @ If:
53,476 Records
Image Part Manufacturer Description Stock Action
UGF12JHC0G Taiwan Semiconductor
DIODE GEN PURP 600...
3,473
In-stock
Inquiry
UGF5J C0G Taiwan Semiconductor
DIODE GEN PURP 600...
1,520
In-stock
Inquiry
UGF5JHC0G Taiwan Semiconductor
DIODE GEN PURP 600...
1,178
In-stock
Inquiry
UGF8JD C0G Taiwan Semiconductor
DIODE GEN PURP 600...
833
In-stock
Inquiry
UGF8JDHC0G Taiwan Semiconductor
DIODE GEN PURP 600...
4,628
In-stock
Inquiry
UGF8JHC0G Taiwan Semiconductor
DIODE GEN PURP 600...
2,143
In-stock
Inquiry
1N4001G B0G Taiwan Semiconductor
DIODE GEN PURP 50V...
833
In-stock
Inquiry
1N4001GHB0G Taiwan Semiconductor
DIODE GEN PURP 50V...
1,732
In-stock
Inquiry
1N4002G B0G Taiwan Semiconductor
DIODE GEN PURP 100...
1,164
In-stock
Inquiry
1N4002GHB0G Taiwan Semiconductor
DIODE GEN PURP 100...
4,621
In-stock
Inquiry
1N4003G B0G Taiwan Semiconductor
DIODE GEN PURP 200...
1,115
In-stock
Inquiry
1N4003GHB0G Taiwan Semiconductor
DIODE GEN PURP 200...
4,711
In-stock
Inquiry
1N4004G B0G Taiwan Semiconductor
DIODE GEN PURP 400...
1,709
In-stock
Inquiry
1N4004GHB0G Taiwan Semiconductor
DIODE GEN PURP 400...
2,913
In-stock
Inquiry
1N4005G B0G Taiwan Semiconductor
DIODE GEN PURP 600...
4,437
In-stock
Inquiry
1N4005GHB0G Taiwan Semiconductor
DIODE GEN PURP 600...
3,949
In-stock
Inquiry
1N4006G B0G Taiwan Semiconductor
DIODE GEN PURP 800...
1,431
In-stock
Inquiry
1N4006GHB0G Taiwan Semiconductor
DIODE GEN PURP 800...
3,811
In-stock
Inquiry
1N4007G B0G Taiwan Semiconductor
DIODE GEN PURP 1A...
759
In-stock
Inquiry
1N4007GHB0G Taiwan Semiconductor
DIODE GEN PURP 1A...
862
In-stock
Inquiry