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IV1Q12050T4

IV1Q12050T4
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Part Number IV1Q12050T4
LIXINC Part # IV1Q12050T4
Manufacturer Inventchip Technology
Category
Description SIC MOSFET, 1200V 50MOHM, TO-247
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IV1Q12050T4 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Oct 23 - Oct 27 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IV1Q12050T4 Specifications

Part Number:IV1Q12050T4
Brand:Texas Instruments
Current - Continuous Drain (Id) @ 25°C :58A (Tc)
Drain to Source Voltage (Vdss) :1200 V
Drive Voltage (Max Rds On, Min Rds On) :20V
FET Feature :-
FET Type :N-Channel
Gate Charge (Qg) (Max) @ Vgs :120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds :2750 pF @ 800 V
Mounting Type :Through Hole
Operating Temperature :-55°C ~ 175°C (TJ)
Package / Case :TO-247-4
Power Dissipation (Max) :344W (Tc)
Product Status :Active
Rds On (Max) @ Id, Vgs :65mOhm @ 20A, 20V
Supplier Device Package :TO-247-4
Technology :SiCFET (Silicon Carbide)
Vgs (Max) :+20V, -5V
Vgs(th) (Max) @ Id :3.2V @ 6mA

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