G5S12010BM
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For Reference Only
| Part Number | G5S12010BM |
| LIXINC Part # | G5S12010BM |
| Manufacturer | Global Power Technology Co. Ltd |
| Category | |
| Description | SIC SCHOTTKY DIODE 1200V 10A 3-P |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | G5S12010BM PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Oct 23 - Oct 27 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
G5S12010BM Specifications
| Part Number: | G5S12010BM |
| Brand: | Texas Instruments |
| Current - Average Rectified (Io) (per Diode) : | 19.35A (DC) |
| Current - Reverse Leakage @ Vr : | 50 µA @ 1200 V |
| Diode Configuration : | 1 Pair Common Cathode |
| Diode Type : | Silicon Carbide Schottky |
| Mounting Type : | Through Hole |
| Operating Temperature - Junction : | -55°C ~ 175°C |
| Package / Case : | TO-247-3 |
| Product Status : | Active |
| Reverse Recovery Time (trr) : | 0 ns |
| Speed : | No Recovery Time > 500mA (Io) |
| Supplier Device Package : | TO-247AB |
| Voltage - DC Reverse (Vr) (Max) : | 1200 V |
| Voltage - Forward (Vf) (Max) @ If : | 1.7 V @ 5 A |
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Quick Inquiry
| In Stock | 4962 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.0000 | $0.0000 |
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