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Current - Continuous Drain (Id) @ 25°C:
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Gate Charge (Qg) (Max) @ Vgs:
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5,621 Records
Image Part Manufacturer Description Stock Action
SIA912DJ-T1-GE3 Vishay
MOSFET 2N-CH 12V 4.5...
4,220
In-stock
Inquiry
SIA913DJ-T1-GE3 Vishay
MOSFET 2P-CH 12V 4.5...
530
In-stock
Inquiry
SIA917DJ-T1-GE3 Vishay
MOSFET 2P-CH 20V 4.5...
2,990
In-stock
Inquiry
SIB914DK-T1-GE3 Vishay
MOSFET 2N-CH 8V 1.5A...
3,861
In-stock
Inquiry
SI4226DY-T1-GE3 Vishay
MOSFET 2N-CH 25V 8A...
835
In-stock
Inquiry
SI4561DY-T1-GE3 Vishay
MOSFET N/P-CH 40V 6...
1,091
In-stock
Inquiry
SI4952DY-T1-GE3 Vishay
MOSFET 2N-CH 25V 8A...
2,448
In-stock
Inquiry
IRF7751TRPBF Infineon Technologies
MOSFET 2P-CH 30V 4.5...
3,969
In-stock
Inquiry
IRF7756TRPBF Infineon Technologies
MOSFET 2P-CH 12V 4.3...
3,000
In-stock
Inquiry
IRF7750TRPBF Infineon Technologies
MOSFET 2P-CH 20V 4.7...
2,595
In-stock
Inquiry
TPC8208(TE12L,Q,M) Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 20V 5A...
3,475
In-stock
Inquiry
TPC8405(TE12L,Q,M) Toshiba Electronic Devices and Storage Corporation
MOSFET N/P-CH 30V 6...
4,588
In-stock
Inquiry
TPCF8304(TE85L,F,M Toshiba Electronic Devices and Storage Corporation
MOSFET 2P-CH 30V 3.2...
3,015
In-stock
Inquiry
TPCP8203(TE85L,F) Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 40V 4.7...
810
In-stock
Inquiry
TPCP8401(TE85L,F) Toshiba Electronic Devices and Storage Corporation
MOSFET N/P-CH 20V/1...
3,507
In-stock
Inquiry
TPC8211(TE12L,Q,M) Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30V 5.5...
1,104
In-stock
Inquiry
TPC8212-H(TE12LQ,M Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30V 6A...
3,500
In-stock
Inquiry
TPC8213-H(TE12LQ,M Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 60V 5A...
4,688
In-stock
Inquiry
SI6562DQ-T1-GE3 Vishay
MOSFET N/P-CH 20V 8...
3,439
In-stock
Inquiry
SI6925ADQ-T1-GE3 Vishay
MOSFET 2N-CH 20V 3.3...
2,630
In-stock
Inquiry