- Manufacturer：
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- onsemi (1)
- Capacitance @ Vr, F：
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- Diode Type：
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- Operating Temperature：
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- Package / Case：
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- Power Dissipation (Max)：
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- Product Status：
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14 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
onsemi | SBD SERIES 35MA 10V |
622
In-stock
|
Inquiry | ||
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE SCHOTTK... |
2,705
In-stock
|
Inquiry | ||
|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE STANDAR... |
1,424
In-stock
|
Inquiry | ||
|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE STANDAR... |
2,936
In-stock
|
Inquiry | ||
|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE STANDAR... |
3,188
In-stock
|
Inquiry | ||
|
Microchip Technology | SI NOISE HERMETI... |
3,907
In-stock
|
Inquiry | ||
|
|
Microchip Technology | SI NOISE HERMETI... |
2,051
In-stock
|
Inquiry | ||
|
|
Microchip Technology | SI NOISE NON HERM... |
747
In-stock
|
Inquiry | ||
|
|
Microchip Technology | SI NOISE NON HERM... |
1,252
In-stock
|
Inquiry | ||
|
|
Microchip Technology | SI NOISE HERMETI... |
3,490
In-stock
|
Inquiry | ||
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
764
In-stock
|
Inquiry | ||
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
2,198
In-stock
|
Inquiry | ||
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
3,697
In-stock
|
Inquiry | ||
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
3,895
In-stock
|
Inquiry |