- Capacitance @ Vr, F：
-
- Current - Reverse Leakage @ Vr：
-
- Operating Temperature - Junction：
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- Package / Case：
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- Reverse Recovery Time (trr)：
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- Supplier Device Package：
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16 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
Vishay | DIODE GEN PURP 100... |
2,779
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 100... |
2,044
In-stock
|
Inquiry | ||
|
Taiwan Semiconductor | 25NS, 4A, 100V, ULTRA... |
4,376
In-stock
|
Inquiry | ||
|
Taiwan Semiconductor | 25NS, 4A, 200V, ULTRA... |
3,751
In-stock
|
Inquiry | ||
|
Taiwan Semiconductor | 25NS, 4A, 100V, ULTRA... |
1,942
In-stock
|
Inquiry | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 200V, ULTRA... |
2,029
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 100... |
2,644
In-stock
|
Inquiry | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 100V, ULTRA... |
4,210
In-stock
|
Inquiry | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 200V, ULTRA... |
1,005
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 200... |
3,031
In-stock
|
Inquiry | ||
|
Nexperia | PNE20040EPE/SOT1289B... |
3,707
In-stock
|
Inquiry | ||
|
|
Nexperia | PNE20040EPE-Q/SOT128... |
4,867
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 200... |
4,065
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 200... |
2,485
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 100... |
1,959
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 200... |
4,884
In-stock
|
Inquiry |